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Ultra-Fast memory with Quantum Dots

By: Gabriel Gache, Science News Editor

There are two main types of random access memory currently on the market worldwide. The Flash memory, the most widely known as a portable memory and dynamic random access memory used in personal computers. Both have drawbacks, but they complement each other. For example, the Flash memory is fragile, but they are very slow in writing data. On the other hand, DRAM memory are volatile and have high speed recording.

The problem is that there is no quick solution to create flash memory technology in the semiconductor industry. In addition, cooperation between the Technical University of Berlin and Istanbul University argues that the ultimate Flash memory, information can write only a few nanoseconds. Martin Geller, from the Technical University of Berlin, said that: "Flash memory, which is now on the market-driver in the semiconductor industry, and everyone knows that from memory, digital cameras and mp3 players, has been slow write time. Our quantum-dot based on memory can provide long-term storage without the energy consumption of Flash memory, as well as fast write time and better scalability for real devices. "

Andreas Marent, Geller colleague related that they have developed the first prototype was almost as fast as DRAM devices, but to improve it, quantum dot memory can be written in only one picosecond that 100 times faster than the fastest DRAM device .

The prototype design

The device was constructed from indium arsenide semiconductor gallium arsenide substrate on. Despite the fact that the substrate is a "p-doped ', the second layer of gallium arsenide, indium arsenide covering quantum dots is the" n-doped', thus restoring the basic structure of compounds within pn diodes, while the flow of electrical permit a current only in one direction. Further more, the property of the diodes allows them to act as capacitors and, in certain circumstances.

For example, if the electric current applied across the quantum dot-capacitor diode, it will become electrically charged. Level storage charge indicates that bit of information, quantum dot Holding libo'1 'ili'0'. Small electric charge predstavlyaet'1 'bit , while kak'0 'presented through high charge capacity.

Although the speed of the device almost 100 times more than the typical PC RAM, its speed actually slower than that, in connection with the experimental setup. Geller speculates that the near future could bring it to a speed of one nanosecond - 20 times faster than memory, and even a few times picoseconds physical characteristics of all settled.

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