Samsung starts mass production of the industry's first 2Gb 40nm memory chip

Samsung, the world's leading innovators in advanced memory technology, recently announced that it successfully launched mass production of the first two gigabytes (GB) DDR3 devices, are designed by efficient 40nm technology class. With the announcement of the company further strengthens its position as an innovator in the memory industry as its customers with an efficient production that provides about 60 percent productivity increase in production more than previous generation 50nm process.

"We see market adoption of DDR3 in motion and courtesy of the early registration of 2Gb DDR3 with the most efficient DRAM manufacturing technology available today," said Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc. "This will show the way for a new standard for premium environmentally friendly DRAM solutions offer the most advanced, low power RDIMM for servers everywhere."

The company announced that it would use the new class 40nm chip at 16 GB, 8 GB and 4 GB RDIMMs to servers and UDIMM (unregistered in-line memory modules) for workstations and desktop computers. It will also SODIMM (small summary dual in-line memory modules) up to 4 GB for use in laptops, for customers with complete memory to offer the company's latest memory chip. According to Samsung, the new 2Gb chip is designed as energy-efficient solutions for high-density, high-performance memory and can support data speeds of 1.6 gigabits per second (Gbps) of 1.35 volts.

According to a recent report from market research firm iSuppli, 2GB DDR3 is expected to account for 82 percent of the total DDR3 DRAM market in terms of units sold in 2012. Next year, these new chips are expected to become mainstream DDR3 DRAM product, Samsung's move is a special interest, managed to be the first to mass-produce these chips.